Exponential Escape Rate of Filamentary Incubation in Mott Spiking Neurons
نویسندگان
چکیده
The resistive switching induced in Mott materials by a strong applied voltage allows for artificial spiking neurons with great potential. However, controlling the collapse is challenge, as we lack physical understanding of phenomenon. Here numerical simulations and experiments reveal how thermal electronic effects jointly contribute to intrinsically stochastic, more surprisingly it Poissonian process an exponential escape rate, just like firing actual biological neurons. This result provides unexpectedly realistic aspect implementation tomorrow's energy-efficient neurocomputing hardware.
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ژورنال
عنوان ژورنال: Physical review applied
سال: 2022
ISSN: ['2331-7043', '2331-7019']
DOI: https://doi.org/10.1103/physrevapplied.17.024028